The body current Is of deep submicron lightly doped drain pMOSFETs has been investigated. Based on the experimental results, an analytical I-B model, applicable for devices operating in a Bi-MOS hybrid-mode environment, has been developed for the first time. The proposed model is able to effectively characterize the measured is results over a wide range of independently applied biases (gate, drain and body) and gate lengths (from 1 mum down to 0.25 mum). The possibility of minimizing or even eliminating the undesired Ig is also explored and discussed for the first time.