In this paper, we present a study of a Ti/Ni/Al contact on n-type I H-SIC and compare it with Al/Ni/Al contact. X-ray diffraction analysis was used to identify the intermetallic compound formed at the interface and four-point probe method was employed to determine the specific contact resistivity, rho (c). The contacts were ohmic as-deposited (10(-2) to 10(-3) Omega cm(2)). After annealing at 1000 degreesC, the specific contact resistivity was 4.5 x 10(-5) Omega cm(2), which is two times lower than that of the Al/Ni/Al contact prepared in the same way.