Analytical considerations led to the proposal of a new device structure for a bidirectional switch, monolithic bidirectional switch. To investigate more thoroughly the electrical characteristics which can be realized by such a structure numerical simulations are carried out. The results completely confirm the expectations and reveal excellent blocking and forward characteristics which seem close to the limit of the respective semiconductor material. Additionally, the device promises to offer a tight control of switching transients. If these characteristics could be experimentally verified, they would allow a new quality for inverter design. At present, thus, the main drawback is that no real devices exist and all results are based on simulation only.