Solid-State Electronics, Vol.44, No.8, 1373-1379, 2000
A scalable thermal model for trench isolated bipolar devices
A new physical model is presented, which predicts the thermal resistance of a bipolar transistor fabricated in a trench isolated technology. The model is applied to devices with a variety of geometries in two trench isolated technologies. The average prediction of the model is within 10% of the measured values.