It is known that stress induced leakage current created by Fowler-Nordheim injection in Si/SiO2 structures has a component which increases drastically as the oxide thickness decreases. In the literature this component is considered to be a reproducible de component. Nevertheless recent measurements have shown that this component decays continuously when a non-stressing field is applied on the sample. The decay is irreversible as long as the sample undergoes no further stressing. This paper reports complementary information about this phenomenon. The magnitude of the decay is studied as a function of the stress field polarity, the non-stressing field magnitude and polarity, and the measurement field polarity. Our conclusion is that the stress induced leakage current decay is triggered by holes of low energy injected from the anode.