Solid-State Electronics, Vol.44, No.1, 185-187, 2000
High characteristic temperature (T-o=322 K near room temperature) of V-grooved AlGaAs-GaAs quantum wire diode lasers
High characteristic temperature (T-o = similar to 322 K) is demonstrated near room-temperature with V-grooved, AlGaAs-GaAs multiple quantum wire (QWR) lasers grown by flow rate modulation epitaxy. The wavelength tuning rate of temperature Delta lambda/Delta T measured for 300 mu m long uncoated lasers is similar to 0.19 nm/degrees C and that of injection current Delta lambda/lambda I is extremely small, in between 0.02 and 0.03 nm/mA in the temperature range 10 to 70 degrees C.