Molecular electronic devices were fabricated with amino-style derivatives as redox-active components. These molecules are amphiphilic to allow monolayer formation by the Langmuir-Blodgett (LB) method, and this LB monolayer is inserted between two metal electrodes. On measuring the current-voltage (I-V) characteristics, it was found that the Al/amino style LB monolayer/Al devices show remarkable hysteresis and switching behavior, so that they can be used as memory devices at ambient conditions, when an aluminum oxide layer exists on the bottom electrode. From the results of I-V measurements, we acquired values of the switching voltage and some large on/off ratios in the case of the ASBC-18 molecule. Also, we improved the yield of the molecular electronic device by reducing the area of the device and by inserting a Ti protecting layer between the top metal electrode and the amino style LB monolayer. (c) 2006 Elsevier B.V. All rights reserved.