The electrical transport properties of mesoscopic graphite have been investigated in a gate voltage configuration. Few layer graphene structures made from Kish graphite exhibit Shubnikov-de Haas (SdH) oscillations in magnetic fields up to 33 T, with a strong gate voltage dependence. A two band model can be used to explain the linear dependence of the SdH frequency on the gate voltage. The temperature dependence of the SdH oscillation amplitude allows the determination of the effective masses of the carriers, which remain comparable between mesoscopic and bulk graphite samples. However, mesoscopic graphite thinner than 130 nm does not exhibit the field induced charge density wave transition seen in bulk samples above 25 T at low temperatures. (c) 2006 Elsevier B.V. All rights reserved.