Silicone계 Photoresist의 합성과 그 감광특성

강두환; 정낙진; 김원기

Polymer(Korea), Vol.16, No.5, 614-622, September, 1992

Export Citation

Silicone계 Photoresist의 합성과 그 감광특성

Synthesis and Photocharacteristics of Silicones Photoresist

강두환, 정낙진, 김원기

초록

Polydimethylsilane을 제조하고 이를 열분해하여 polycarbosilane(PCS)을 제조하고 여기에 allylamine을 반응시켜 aminopropyl기를 도입시킨 다음 naphthoquinone-1,2-diazide-5-sulfonylchloride를 반응시켜naphthoquinone-1,2-diazide-5-sulfonyl polycarbosilane(NDSP)을 제조하였다. NDSP와 polyaminopropylcarbosilane을 섞어 제조한 시료 NDC는 backbone수지의 분자량이 커질수록 sensitivity는 향상되었으나 반면에 contrast는 감소하는 경향을 나타냈다 또한 sensitizer의 종류와 양에 따라 다르게 나타나는데 2,6-dichloro-4-nitroaniline보다는 picramide를 사용했을때 sensitivity와 contrast가 향상하는 것으로 나타났으며, sensitivity의 양을 증가했을때도 sensitivity, contrast 모두 향상하는 경향을 나타냈다. NDC-2의 경우에 sensitivity가 240∼350mJ/cm² contrast γ=1.48∼2.07로 나타났다. 광학계수를 측정하므로서 감광성을 측정할 수 있는 이론식으로 부터 합성한 시료에 대하여 감광특성을 측정하고 이 결과를 잔막수득율법으로 구한 결과와 비교 검토하였을때 그 결과가 잘 일치되었다.

Naphthoquinone-1,2-diazide-5-sulfonyl polycarbosilane(NDSP) was synthesized by reacting naphthoquinone-1,2-diazide-5-sulfonylchloride with polyaminopropylcarbosilane prepared from polycarbosilane with allylamine. The sensitivity of NDC prepared by mixing NDSP with polyaminopropylcarbosilane was improved with increasing the molecular weight of backbone resin, but the contrast was decreased. Sensitivity and contrast were varied with the kinds and quantities of sensitizers. Picramide was more effective sensitizer than 2,6-dichloro-4-nitroaniline in the sensitivity and contrast. In case of NDC-2, the sensitivity was 240∼350mJ/cm² and the contrast was 1.48∼2.07. The theoretical equation which can determine easily photosensitive characteristics to the prepared samples was derived. From the theoretical equation, the optical coefficient was calculated by measuring the optical transmittance of exposed sample film. Compared the results from the theoretical equation and conventional yield of residual film method, the similar result was obtained.

[References]

Chinn JD, Adeside I, Wolf ED, Tiberio RC, J. Vac. Sci. Technol., 19(4), 1418 (1981)
Schwartz GC, Schaible PM, "Solid State Technol. Nov," 85 (1980)
Taylor GN, Wolf TM, Moran JM, J. Vac. Sci. Technol., 19(4), 872 (1981)
Zeigler JM, Gorrdon Fearon FM, "Silicon-Based Polymer Science a Comprehensive Resource," p. 265, ACS Washington, D.C. (1990)
Lewin M, "Polymers for Advanced Technologies," p. 18, VCH (1989)
Babich E, Shaw JM, Hatzakis M, Paraszczak J, 8th Inter. Symp. on Organosilicon Chem., p. 98 (1987)
Babich E, Shaw JM, U.S. Patent, 4,603,195 (1986)
Kang DW, Chung NJ, J. Korean Ind. Eng. Chem., 2(4), 348 (1991)
Yajima S, Hasegawa Y, Hayashi J, Iimura M, J. Mater. Sci., 13, 2569 (1978)
Fritz G, Angew. Chem.-Int. Edit., 79, 657 (1967)
Kang DW, Chung NJ, J. Korean Ind. Eng. Chem., 1(2), 161 (1990)
Lai JH, Shepherd LT, J. Electrochem. Soc., 126, 696 (1979)

[Referenced By]

[1] Chinn JD, Adeside I, Wolf ED, Tiberio RC, J. Vac. Sci. Technol., 19(4), 1418 (1981)

[2] Schwartz GC, Schaible PM, "Solid State Technol. Nov," 85 (1980)

[3] Taylor GN, Wolf TM, Moran JM, J. Vac. Sci. Technol., 19(4), 872 (1981)

[4] Zeigler JM, Gorrdon Fearon FM, "Silicon-Based Polymer Science a Comprehensive Resource," p. 265, ACS Washington, D.C. (1990)

[5] Lewin M, "Polymers for Advanced Technologies," p. 18, VCH (1989)

[6] Babich E, Shaw JM, Hatzakis M, Paraszczak J, 8th Inter. Symp. on Organosilicon Chem., p. 98 (1987)

[7] Babich E, Shaw JM, U.S. Patent, 4,603,195 (1986)

[8] Kang DW, Chung NJ, J. Korean Ind. Eng. Chem., 2(4), 348 (1991)

[9] Yajima S, Hasegawa Y, Hayashi J, Iimura M, J. Mater. Sci., 13, 2569 (1978)

[10] Fritz G, Angew. Chem.-Int. Edit., 79, 657 (1967)

[11] Kang DW, Chung NJ, J. Korean Ind. Eng. Chem., 1(2), 161 (1990)

[12] Lai JH, Shepherd LT, J. Electrochem. Soc., 126, 696 (1979)