The performance of organic electronic devices is often limited by injection. In this paper, improvement of hole injection in organic electronic devices by conditioning of the interface between the hole-conducting layer (buffer layer) and the active organic semiconductor layer is demonstrated. The conditioning is performed by spin-coating poly(9,9-dioctyl-fluorene-co-N(4-butylphenyt)-diphenylamine) (TFB) on top of the poly(3,4-ethylene dioxythiophene): poly(styrene sulfonate) (PEDOT-PSS) buffer layer, followed by an organic solvent wash, which results in a TFB residue on the surface of the PEDOT.PSS. Changes in the hole-injection energy barriers, bulk charge-transport properties, and current-voltage characteristics observed in a representative PFO-based (PFO: poly(9,9-dioctyifluorene)) diode suggest that conditioning of PEDOT.PSS surface with TFB creates a stepped electronic profile that dramatically improves the hole-injection properties of organic electronic devices.