Advanced nanoanalysis of a Hf-based high-k dielectric stack prior to activation

MacKenzie M; Craven AJ; McComb DW; De Gendt S; Docherty FT; McGilvery CM; McFadzean S

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Electrochemical and Solid State Letters, Vol.10, No.6, G33-G35, 2007

Advanced nanoanalysis of a Hf-based high-k dielectric stack prior to activation

MacKenzie M, Craven AJ, McComb DW, De Gendt S, Docherty FT, McGilvery CM, McFadzean S

Analytical electron microscopy techniques are used to investigate elemental distributions across a high-k dielectric stack with a metal gate. Electron energy-loss spectroscopy results from a Si(100)/SiO2/HfO2/TiN/a-Si gate stack confirm the presence of an oxide interfacial phase at the TiN/a-Si interface prior to activation of the stack. (c) 2007 The Electrochemical Society.