Zinc oxide films were grown in a temperature range of 75-150 degrees C by plasma-enhanced ALD for the application of flexible transparent thin-film transistor (TFT). We have investigated the effect of precursor pulsing time, temperature, and radio frequency power on the film growth. The X-ray diffraction patterns of polycrystalline ZnO films showed rather preferred (002) orientation even at a low temperature of 150 degrees C. We could obtain highly resistant ZnO film, being suitable for the active layer of TFT, at low temperature with the reactive oxygen plasma to result in decreased carrier density. (c) 2006 The Electrochemical Society.