SrRuO3 films were deposited at 300-500 degrees C on Pb(Zr-0.4,Ti-0.6)O-3-covered Ir/SiO2/Si substrates by metallorganic chemical vapor deposition (MOCVD). Through the pulsed introduction of a source gas mixture (pulsed-MOCVD), the Ru/(Ru+Sr) ratio became unity above 350 degrees C due to a similar deposition rate for SrO and RuOx components in the film. It became unity at 450 degrees C in spite of the increased input-gas flow rate of the Ru source under the fixed Sr source and we obtained films consisting of crystalline stoichiometric SrRuO3. This demonstrated that good crystalline stoichiometric SrRuO3 film was reproducible by pulsed-MOCVD. Excellent fatigue properties and ferroelectricity were obtained from the SRO/PZT/Ir capacitor. (c) 2006 The Electrochemical Society.