An alpha-Si crystallization phenomenon that originates from the perimeter of a germanium seed during anneal at 500 degrees C is reported. The perimeter crystallization is reasonably uniform and reaches 500 nm after a 60 h anneal at 500 degrees C. Transmission electron microscopy shows that the crystallized material is polycrystalline and made up of grains with various orientations. In contrast, 60 h anneal at 550 degrees C gives increased alpha-Si crystallization beneath the entire germanium seed, as reported previously. This perimeter crystallization phenomenon is advantageous because it allows alpha-Si crystallization to be achieved at a lower thermal budget. (c) 2006 The Electrochemical Society.