The influence of the electron-beam-evaporated Pt top electrode annealing procedure on the ferroelectric performance ofmetalorganic chemical vapor-deposited (MOCVD) Pb(Zr0.2Ti0.8)O-3 thin films deposited on an Ir electrode was investigated. Although the top Pt electrode was fabricated at room temperature, an interfacial reaction already occurred resulting in a PbxPty alloy formation. This interfacial reaction degraded the reliability (fatigue) of the ferroelectric capacitor. Conventional furnace annealing of the Pt top electrode at temperatures ranging from 200 to 600 degrees C further degraded the ferroelectric performance. Rapid thermal annealing at 600 degrees C successfully suppressed the interfacial reaction and largely improved the ferroelectric performance. (c) 2006 The Electrochemical Society.