Pb(Zr, Ti)O-3 films were deposited at 540 degrees C on trenched substrates with submicrometer diameters by pulsed-metallorganic chemical vapor deposition. The respective fluctuations of Pb/(Zr + Ti) and Zr/(Zr + Ti) molar ratios were in a range of +/- 19 and +/- 17% from each average value at the sidewalls of trenches with a diameter of 200 nm and a depth of 685 nm (aspect ratio of 3.4). The sidewall-bottom step coverage was successfully maintained above 70% up to a depth of 685 nm. The present results show the possibility of uniform Pb(Zr, Ti)O-3 film deposition on the trench substrates with high aspect ratio. (c) 2005 The Electrochemical Society. [DOI: 10.1149/ 1.2137470] All rights reserved.