The HfxAlyOz nanomixed films were deposited at 300 S C on Ru/TiN/Ti/SiO2/Si substrates using an atomic layer deposition and the electrical properties of Ru/HfxAlyOz/Ru capacitors were investigated as a function of a film thickness and rapid thermal annealing temperature. The dielectric constant, dielectric loss, and leakage current density at 1.0 V in the films of 7 nm thickness were approximately 16, 0.9%, and 1 x 10(-6) A/cm(2), respectively. The capacitors exhibit the stable electrical properties in a thermal treatment up to 800 S C. The Ru/HfxAlyOz/Ru capacitors with an equivalent oxide thickness of 11 angstrom in film thickness of 6 nm are possible to apply for 70 nm generation dynamic random access memory application. (c) 2005 The Electrochemical Society.