Rhodium thin films were grown by atomic layer deposition (ALD) from Rhs(acacd)(3) and oxygen. The film growth rate at 250 degrees C was independent of the oxygen pulse time but showed some dependence on the Rhs(acac)(3) pulse time. The films were metallic rhodium with a preferred (111) orientation, and had low resistivities and low impurity contents. The film thickness depended linearly on the number of the deposition cycles. (c) 2005 The Electrochemical Society.