The observation of anomalous Hall effect in Mn ion-implanted p(+)GaAs:C is reported. For differing Mn doses, the low-field sensitivity, related to anomalous Hall coefficient (R-S), increases up to a dose of 3 x 10(16) cm(-2) with a maximum of similar to37 V/A T at 0.1 mA bias current and at 70 K, measured in standard van der Pauw geometry. Temperature and sheet resistance dependence of the anomalous Hall coefficient indicates the skew scattering mechanism to dominate from 70 to 400 K with onset of anomalous Hall effect below; 275 K, consistent with magnetization measurements. (C) 2004 The Electrochemical Society.