Conformal deposition of platinum thin films by chemical vapor deposition using (methylcyclopentadienyl)trimethylplatinum as a liquid precursor, whose vapor was transferred by an argon carrier gas, is presented. Conformal coverages at thicknesses of less than 30 nm were obtained under the condition of high oxygen partial pressures and low temperatures. The surface morphology roughened and changed to a discontinuous grain growth when the film thickness and growth temperature were increased. The dense and smooth films with conformal coverage can be used in the storage nodes of capacitors in gigabit dynamic random access memories.