화학공학소재연구정보센터
Electrochemical and Solid State Letters, Vol.3, No.6, 293-296, 2000
Growth of ZnSe/GaAs and ZnSe/Ge using atmospheric pressure metallorganic chemical vapor deposition
ZnSe was grown on top of GaAs and Ge substrates using atmospheric pressure metallorganic chemical vapor deposition. The quality of the grown materials has been investigated using the atomic force microscope and an electrochemical cyclic voltammetry profiler. The results show that high quality ZnSe layers can be grown using the process developed.