Periodic photoresist patterns have been fabricated by laser interference lithography over a wafer-scale area. The structures are used as an etching mask for the subsequent reactive-ion etching of the underlying Si3N4 layer and etched about 9 nm into the highly doped Si substrate. Au nanowire or nanoring arrays have been prepared by selective electrochemical deposition on the step edges of the Si3N4 structures (see figure and cover).