화학공학소재연구정보센터
Advanced Materials, Vol.18, No.12, 1527-1527, 2006
Homoepitaxial growth and lasing properties of ZnS nanowire and nanoribbon arrays
Orientation-dependent cathodoluminescence has been found in crossed nanowire arrays (see figure). ZnS crossed nanowire arrays and aligned nanoribbons are grown on micrometerwide single-crystal ZnS ribbon substrates, which leads to bandgap lasing emission in two specific directions. The reported results present a new route to synthesize II-VI semiconducting nanostructures with attractive photoelectronic properties.