Communication: A unique method to deposit an atomic layer of phosphorus to promote the chemisorption of metallorganics on oxide layers is presented. The atomic layer is produced by the deposition of a thicker layer of phosphorus on SiO2 by plasma decomposition of phosphine followed by annealing at 255degreesC to sublime all but the single layer of phosphorus bonded to the SiO2 surface. This approach is found to be useful to promote the chemisorption of precursors such as palladium(II) hexafluoroacetylacetonate on dielectric oxides and has implications for the wetting and adhesion between highly polarizable metals and dielectric surfaces.