Metal silicides are promising candidates as electrical contacts to silicon nanowires. Metal vapor vacuum arc (MEVVA) ion source implantation is used by these authors to synthesize NiSi2/Si (see Figure) and COSi2/Si on the surface of bare silicon nanowires. It is demonstrated that the structure of the metal silicide layer is sensitive to the annealing temperature and that, under appropriate conditions, the layer is well oriented with respect to the nanowire core. [GRAPHICS] Metal Silicide/Silicon Nanowires from Metal Vapor Vacuum Arc Implantation.