The preparation of ultra low-k zeolite films with high mechanical strength by a simple spin-on process is demonstrated. Continuous, smooth, thin zeolite silicalite films with a dielectric constant of 2.1 and elastic modulus of 16-18 GPa are obtained by this process, which is simple and compatible with the requirements of the semiconductor manufacturers. Polishing experiments showed that the film is potentially compatible with chemical mechanical polishing (CMP). The described pure silica film could be an attractive candidate for ultra-low-k materials for future generation microprocessors.