Ultra large-scale integration (ULSI) should lead to 100 nm production circuits by 2006 as predicted by the Semiconductor Industry Association (SIA). For-sub-100 nm lithography it is desirable to synthesize higher performance and higher contrast resists An optimum combination of high contrast necessary for sub-100 nm resolution, high sensitivity for high throughput can be achieved by carefully engineering organic-inorgnnic nanocomposites, acting as optimum resists for a given lithographic process This review outlines emerging approaches towards the achievement of these goals A section also highlights Selected state-of-the-art resists. Nanocomposite resists for sub-100 nm features have included the incorporation of fullerene C-60 in a commercial resist ZEP520 (see Figure). Alternatively, nanoscale silica, particles :terre incorporated in the polymer backbone as covalently bonded pendant clusters. The dispersion of 8-10 nm Silica particles in a chemically amplified resist has also been reported. In all these approaches, a higher softening temperature (T-g) and increased rigidity, due to increased density of the film resulted. Higher etch resistance as well as increased mechanical properties and also enhanced resist performance for nanometer pattern fabrication have been obtained in these nanocomposites. Alternative approaches to conventional lithography, based on self-assembled nanostructures, incorporating inorganic features as well as nanoimprinting via silicon polymer precursors, are also discussed.