Advanced Materials, Vol.13, No.8, 591-591, 2001
A general synthetic route to III-V compound semiconductor nanowires
The oxide-assisted method for the synthesis of gallium arsenide nanowires reported here has the advantage of requiring neither a metal catalyst nor a template, which simplifies the purification and subsequent application of the wires. An SEM image of the nanowires is shown in the Figure. The results of a TEM examination are reported and a growth mechanism is proposed.