화학공학소재연구정보센터
Advanced Materials, Vol.11, No.3, 191-191, 1999
Silicon-germanium strained layer materials in microelectronics
The use of Si1-xGex in microelectronics production is appealing not only because it is compatible with existing industrial technology used for the production of silicon-based microelectronics, but also because the induced strain caused by insertion of a layer of Si1-xGex (see Figure) can significantly improve their performance. The production and properties of these new materials are reviewed.