Sn doped In2O3 films are deposited by rf-magnetron sputtering at 300 degrees C under Ar, Ar + 02 and Ar + H-2 gas ambients. For the film prepared under argon ambient, electrical resistivity 6.5 x 10(-4) ohm cm and 95% optical transmission in the visible region have been achieved optimizing the power and chamber pressure during the film deposition. X-ray diffraction spectra of the ITO film reveal (2 2 2) and (4 0 0) crystallographic planes of In2O3. With the introduction of 1.33% oxygen in argon, (2 2 2) peak of In2O3 decreases and resistivity increases for the deposited film. With further increase of oxygen in the sputtering gas mixture crystallinity in the film deteriorates and both the peaks disappeared. On the other hand, when 1.33% hydrogen is mixed with argon, the resistivity of the deposited film decreases to 5.5 x 10(-4) ohm cm and the crystallinity remains almost unchanged. In case of reactive sputtering, the deposition rate is lower compared to that in case of non-reactive sputtering. HRTEM and first Fourier patterns show the highly crystalline structure of the samples deposited under Ar and Ar + H-2 ambients. Crystallinity of the film becomes lower with the introduction of oxygen in argon but refractive index increases from 1.86 to 1.9. The surface morphology of the ITO films have been studied by high resolution scanning electron microscopy. (c) 2007 Elsevier B.V. All rights reserved.