화학공학소재연구정보센터
Applied Surface Science, Vol.253, No.12, 5345-5348, 2007
Built-in electric field effect on hydrogenic impurity in wurtzite GaN/AlGaN quantum dot
The binding energy of a hydrogenic donor impurity in a wurtzite (WZ) GaN/AlGaN quantum dot (QD) is investigated, including the strong built-in electric field effect due to the spontaneous and piezoelectric polarizations. Numerical results show that the strong built-in electric field induces an asymmetrical distribution of the donor binding energy with respect to the center of the QD. The donor binding energy is insensitive to dot height when the impurity is located at the right boundary of the QD with large dot height. (C) 2007 Elsevier B.V. All rights reserved.