We present a study on the adsorption and thermal decomposition Of C-60 on Co covered Si(111)-7 x 7 using scanning tunneling microscopy and X-ray photoelectron spectroscopy. Co-induced magic clusters grown on Si(l 11)-7 x 7 are identified as a possible adsorption site where 51 +/- 3% of C-60 molecules adsorb at room temperature. On Co/Si(111)-7 x 7, C-60 molecules start to decompose at 450 degrees C, and are completely dissociated to form SiC by 720 degrees C. This temperature is significantly lower than 910 degrees C at which C-60 completely dissociates on clean Si(111)-7 x 7. This is a possible low temperature method for growing crystalline SiC films using C-60 as a precursor molecule. (c) 2006 Elsevier B.V. All rights reserved.