Applied Surface Science, Vol.252, No.22, 7983-7986, 2006
Optical band gap of zinc nitride films prepared on quartz substrates from a zinc nitride target by reactive rf magnetron sputtering
Polycrystalline zinc nitride films have been synthesized onto quartz substrates from the zinc nitride target and the nitrogen working gas by reactive rf magnetron sputtering at room temperature. X-ray diffraction study indicates that polycrystalline zinc nitride films are of cubic structure with the lattice constant a = 0.979(1) nm and have preferred orientations with (3 2 1) and (4 4 2). Its absorption coefficients as well as the film thickness are calculated from the transmission spectra, which are measured with a double beam spectrophotometer. The optical band gap has been determined from the photon energy dependence of absorption coefficient, an indirect transition optical band gap of 2.12(3) eV has been obtained. (c) 2005 Elsevier B.V. All rights reserved.
Keywords:optical band gap;zinc nitride films;zinc nitride target;reactive rf magnetron sputtering;absorption coefficient