Phosphorus-doped p-type ZnO thin films have been realized by metalorganic chemical vapor deposition (MOCVD). The conduction type of ZnO films is greatly dependent on the growth temperature. ZnO films have the lowest resistivity of 11.3 Omega cm and the highest hole concentration of 8.84 x 10(18) cm(-3) at 420 degrees C. When the growth temperature is higher than 440 degrees C, p-type ZnO films cannot be achieved. All the films exhibited p-type conduction after annealing, and the electrical properties were improved comparing with the as-grown samples. Secondary ion mass spectroscopy (SIMS) test proved that phosphorus (P) has been incorporated into ZnO. (c) 2005 Published by Elsevier B.V.