Amorphous hydrogenated silicon (a-Si:H) with high hydrogen content (10-40 at.%), and non-stehiometric silicon-carbon (Si1-xCx) thin films with a variation of the carbon to silicon ratio up to 0.3, were deposited by using a magnetron sputtering source. The Si1-xCx thin films were partially crystallised after deposition by thermal annealing up to 1050 degrees C. The GISAXS (Grazing Incidence Small Angle X-ray Scattering) spectra of all of the prepared specimens indicate the presence of "particles" in the "bulk" of the films. For the a-Si:H samples, "particles" are most probably voids agglomerates with a variation in size between 3 and 6 nm. The mean value of the size distribution of the "particles" increases while its width slightly decreases with the hydrogen content in the film. This indicates a better structural ordering which is consistent with the results of Raman spectroscopy that show a decrease of the ratio between intensities of transversal acoustic (TA) and transversal optic (TO) phonon peaks, I-TA/I-TO, and a narrowing of the TO peak with increasing hydrogen content. These results are discussed as a consequence of the beneficial influence of hydrogen bombardment during the film growth. For Si1-xCx thin films, the "particles" are assumed to be SiC nano-crystals with a size between 2 and 14 nm and they are larger in films with a higher carbon concentration. Inside each of the films, the crystals are larger closer to surface and they grow faster in the direction parallel to the surface than in that which is perpendicular to it. (c) 2005 Elsevier B.V. All rights reserved.