Aluminium-induced crystallization of amorphous silicon (a-Si) in Al/a-Si and a-Si/Al bilayers was studied upon annealing at low temperatures between 165 and 250 degrees C, by X-ray diffraction (XRD) and Auger electron spectroscopy (AES). Upon annealing the inward diffusion of Si along grain boundaries in Al takes place, followed by crystallization of this diffused Si. Continuous annealing leads to (more or less) layer exchange in both types of bilayers. The change in bulk energy of the Al phase (release of macrostress and microstrain, increase of grain size) promotes the occurrence of layer exchange, whereas changes in surface and interface energies counteract the layer exchange. (c) 2005 Elsevier B.V. All rights reserved.