Multilayered thin films of In2O3 and SnO2 have been deposited by conventional and RIF plasma-assisted reactive pulsed laser ablation. with the aim to evaluate their behaviour as toxic gas sensors. The depositions have been carried out by a frequency doubled Nd-YAG laser (lambda = 532 nm. tau = 7 ns) on Si(1 0 0) substrates, in O-2 atmosphere. The thin films have been characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and electrical resistance measurements. A comparison of the electrical response of the simple (indium oxide, tin oxide) and multilayered oxides to toxic gas (nitric oxide, NO) has been performed. The influence on the structural and electrical properties of the deposition parameters, such as substrate temperature and RF power is reported. (c) 2005 Elsevier B.V. All rights reserved.