Nanostructures based on iron oxides in the form of thin films were synthesized while laser chemical vapor deposition (LCVD) of elements from iron carbonyl vapors (Fe(CO)(5)) under the action of Ar+ laser radiation (lambda(L) = 488 nm) on the Si substrate surface with power density about 10(2) W/cm(2) and vapor pressure 666 Pa. Analysis (if surface morphology and relief of the deposited films was carried out with scanning electron microscopy (SEM) and atomic force microscopy (AFM). This analysis demonstrated their cluster structure with average size no more than 100 nm. It was found out that the thicker the deposited film, the larger sizes of clusters with more oxides of higher oxidized phases were formed. The film thickness (d) was 10 and 28 mn. The deposited films exhibited semiconductor properties in the range 170-340 K which were stipulated by oxide content with different oxidized phases. The width of the band gap E-g depends on oxide content in the deposited film and was varied in the range 0.30-0.64 eV at an electrical field of 1.6 x 10(3) Win. The band gap E-g was varied in the range 0.46-0.58 eV at an electrical field of 45 V/m. The band gap which is stipulated by impurities in iron oxides E-g was varied in the range 0.009-0.026 eV at an electrical field of 1.6 x 10(3) V/m and was varied in the range 0-0.16 eV at an electrical field 45 V/m. These narrow band gap semiconductor thin films displayed of the quantum dimensional effect. (c) 2006 Published by Elsevier B.V.