A series of different TiNx thin films were grown by PLD. The purpose for this work was to study through the AES interpretation, how the different conditions of the partial pressure of N inside the chamber during the growing of these thin films, affects the stoichiometry of the TiNx, deposited. The results obtained were that the different thin films change each one through TiN, (x = 0.88-1.33). The results were supported with XPS and EELS spectroscopy doing also an analysis of elemental ratio to show the stoichiometry and Stib-stoichiometry obtained. This work concludes the adequate conditions for this experiment to obtain TiN as thin film by PLD at room temperature, Supported with the results in the present work and the interpretation of the AES spectra even when Ti and N peaks overlap. (c) 2005 Elsevier B.V. All rights reserved.