Single-crystal Ni films were made by the molecular beam epitaxy (MBE) method on Si(100) and Si(110) substrates, respectively, with an 100 angstrom thick Ag buffer layer. The growth temperature T-s was 270 degrees C, and the film thickness t was 500 A. From reflection high-energy electron diffraction (RHEED) patterns, the crystalline symmetries of the two films are clear and as expected. Intrinsic coercivities, H-C(I 0 0) and H-C(110), are plotted as a function of the angle of rotation (P around the crystal axes [100] and [110], respectively. The results show that both H-C(100) and H-C(110) exhibit mixed features of the crystalline (K-C) and the induced uniaxial magnetic (K-u) anisotropies. K-u is the magneto-elastic energy, due to lattice mismatch at the Ni/Ag interface. Moreover, the crystalline anisotropy fields, H-K(100) and H-K(110), and the induced anisotropy filed, H-u, can be calculated as a funtion of phi, respectively. Then, each H-C curve is fitted by the equation: Hc = H-o + H-K + H-u, where H-o is the isotropic pinning field. Meanwhile, domain structures were examined by the Bitter method, using Ferrofluid 707. On the Ni(100) film, we observed the charged cross-tie walls, and on the Ni(100) film, the un-charged Bloch walls. (c) 2005 Elsevier B.V. All rights reserved.