Homoepitaxial growth of ZnO (11 (2) over bar0) films was achieved on single crystal ZnO (I VTO) substrates by metal-organic chemical vapor deposition. The full width at half-maximum of grazing incidence diffraction measurement of film with thickness of 0.95 mu m was smaller than that of a single crystal ZnO substrate. The surface roughness was increased from 1.7 to 37.8 nm with increase in thickness from 0.16 to 0.95 mu m. In the room temperature photoluminescence spectrum of a homoepitaxial film with thickness of 0.95 mu m, the intensity of green emission due to intrinsic defects was weak and the band-edge emission due to free exciton emission was dominantly observed at 3.284 eV. (c) 2004 Elsevier B.V. All rights reserved.