The crystallization kinetics of hydrogenated amorphous silicon thick films grown by plasma-enhanced chemical vapour deposition is studied by differential scanning and isothermal calorimetry in a wide temperature range varying from 600 to 720 degreesC. The reported kinetics is found to correspond to three-dimensional growth. The kinetic parameters obtained are in good agreement with those already published on thin films. (C) 2004 Elsevier B.V. All rights reserved.