Applied Surface Science, Vol.231-2, 826-828, 2004
Zinc determination in A(3)B(5) semiconductors
The results of zinc ion yield measurements obtained by using GaX matrices (X = N, P, As, Sb) under both cesium and oxygen primary ion bombardments are investigated. Excellent detection limits are achieved under O-2(+) primary ion bombardment monitoring the GaZn+ secondary. The swelling dependence on analytical conditions and accuracy of measurements of zinc implanted GaSb samples is investigated. (C) 2004 Published by Elsevier B.V.