STM and nano-FIB have been used to modify InP(0 0 1) and related materials surfaces at nanoscale in order to create nucleation sites for quantum dots. STM has permitted the fabrication of holes as small as being 11.2 +/- 12.8 nm large and 3 +/- 0.8 nm deep on AlInAs surfaces. Nano-FIB has allowed the fabrication of hole arrays with hole diameter of 87 +/- 10 nm, hole depth of 1.5 +/- 1 nm, and array period of 100 nm. FIB-made holes are stable under annealing, but the surface exhibit pollution and structural degradations due to a direct exposure to Ga+ ion beam. Holes obtained by both techniques could be suitable to be used as nucleation sites for quantum dots. (C) 2003 Elsevier B.V. All rights reserved.