X-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES), and scanning electron microscopy (SEM) measurements of polycrystalline AlN surfaces exposed to XeF2 vapor at 1.8 x 10(-4) Torr at sample temperatures ranging from T-s = 300 to 920 K are reported. No change in the chemical composition and morphology of the AlN surface exposed at Ts = 300 K was observed from a virgin AlN surface. The AlN surface exposed at T, = 700 K is partially fluorinated, forming an AlF3 layer, whereas those exposed at T-s = 750 and 800 K are found to be completely covered with an AlF3 layer although no change was observed in morphology. Above T-s= 850 K, however, partially fluorinated AlFx (x = 1, 2) species and exposed AlN surface area were observed but no AlF3-passivated layer was detected, probably because the AlF3 formed is desorbed as soon as it forms. Therefore, it is concluded that, above T-s = 850 K, the fast corrosion reaction of AlN by XeF2 proceeds and thus the AlN surface is strongly etched. (C) 2003 Elsevier Science B.V. All rights reserved.