Post chemical mechanical polishing (CMP) cleaning is a key process for copper (Cu) CMP in dual damascene interconnection technology. During the post CMP cleaning, it is an important issue to minimize organic and Cu contamination residues on the dielectric surface. This study proposed a novel post CMP cleaning using HAL buffer hydrofluoric (BHF) solution and ozone (O-3) water cleaning. The performance of the proposed cleaning technology was investigated and compared to conventional citric solution cleaning, which is currently used in post Cu CMP cleaning. From roughness, contamination residues and electrical characteristics, the proposed cleaning technology showed better performance than citric solution cleaning did. This excellent cleaning performance is attributed to the surface etching and contamination elimination effect of HAL BHF solution and O-3 water. Based on the experimental results, the proposed cleaning technology is feasible and superior to the conventional post CMP cleaning. (C) 2003 Elsevier Science B.V. All rights reserved.