Investigation of preparation and characterization of GaN films on sapphire (0001) substrates

Yang YG; Ma HL; Xue CS; Zhuang HZ; Hao XT; Ma J

Applied Surface Science, Vol.202, No.3-4, 295-300, 2002

DOI10.1016/S0169-4332(02)01011-5 Export Citation

Investigation of preparation and characterization of GaN films on sapphire (0001) substrates

Yang YG, Ma HL, Xue CS, Zhuang HZ, Hao XT, Ma J

Gallium nitride (GaN) films were prepared on sapphire (0001) substrates by post-nitridation technique. XRD. XPS. and TEM measurement results indicate that the polycrystalline GaN with hexagonal wurtzite structure was successfully grown. Intense room-temperature photoluminescence peaked at 466 nm of the films is observed. (C) 2002 Elsevier Science B.V. All rights reserved.

Keywords:GaN films;sapphire (0001) substrates;photoluminescence;blue emission