LaB6 and TiN field emitter arrays (FEAs) have been developed by the transfer mold technique to fabricate sharp, uniform, and low operation voltage FEAs using low work function materials. Because of the sharpening effect on the tips by thermally oxidized SiO2 layer of the molds, emitter tip radii are as small as less than 10 nm. The turn-on voltages of LaB6 and TiN FEA are 110-130 V lower than that of conventional Mo FEA by decreasing the surface barrier heights for field emission, having the same emitter shape. That of the gated LaB6 FEA is as low as 28 V even without high vacuum baking treatment. Transfer mold technique provides easiness of selecting low work function materials as well as superior uniformity, sharpness of FEAs. Transfer mold LaBb(6) and TiN FEAs are useful for low operation vacuum microelectronic devices. (C) 2002 Elsevier Science B.V. All rights reserved.