AIN thin films were grown at 200-450 degreesC on Si substrates by laser ablation of Al targets in nitrogen-reactive atmosphere using a robust and simple experimental set-up based on a Nd-YAG laser. Infrared spectroscopy results indicate the presence of two broad peaks around 679 and 644 cm(-1), typical of AIN compound. Spectroellipsometric spectra were recorded in the range 400-700 nm: the refractive index values were found to be close to those previously reported (less than 9% variation). The cross-plane thermal conductivity of an AIN film was measured in the 80-380 K temperature range by the 3omega method. The values are strongly reduced compared to those of the bulk and the temperature dependence behaviour is glass-like. (C) 2002 Elsevier Science B.V. All rights reserved.