This work reports the ion beam synthesis of n-doped SiC layers. For this, two approaches have been studied: (i) conventional method of doping by implanting with N+ into an ion beam synthesised SiC layer and (ii) a novel method based on pre-doping (with N+ and P+) of the Si wafers before the ion beam synthesis of SiC. For the N+ implantation the electrical data show a p-type overcompensation of the SiC layers for both doping methods used. The structural (XRD) and in-depth (SIMS, spreading resistance) analysis of the samples suggest this overcompensation to be induced by p-type active defects related to the N+ ion implantation damage, and therefore, the need for further optimisation of their thermal processing. In contrast, the P+-doped SiC layers always show n-type conductivity. This is also accompanied by a higher structural quality, being the spectral features of the layers similar to those from the undoped material. Our electrical data, together with the absence of additional stress related to P-implant suggests that this technique could be suitable to avoid effects related to the ion implantation damage in the SiC lattice, although the electrical activation of Pin the SiC lattice is about one order of magnitude lower than in Si.